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Quantitative In-situ TEM Study of Stress Assisted Grain Growth

Sandeep Kumar (UC,Riverside), Aman Haque ()

Mechanics of Thin Films and Multilayered Structures

Tue 2:40 - 4:00

Salomon 203

We present a quantitative in-situ TEM study of stress assisted grain growth in 75 nm platinum thin films. We utilized notch induced stress concentration to observe the microstructural evolution in real time. From quantitative measurements, we find that rapid grain growth occurred above 290 MPa of far field stress and ~0.14% elongation. This value is found to be higher than required for stable interface motion but lower than the stress required for unstable grain boundary motion. We attribute such grain growth to geometrical incompatibility arising out of crystallographic misorientation in adjoining grains, or in other words, geometrically necessary grain growth.