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Multidisciplinary University Research Initiative 2000 Phonon Enhancement of Optoelectronic and Electronic Devices U.S. Air Force Office of Scientific Research for A Multidisciplinary University Research Initiative (MURI' 2000) at Brown University 2000 - 2005 PI : A. Nurmikko (Brown University), co-PI's : G. Belenky, S. Luryi, V. Goldman (SUNY Stony Brook), Qing Hu (Massachusetts Institute of Technology), S. Pei (University of Houston),H. Maris, A. Zaslavsky, Brown University. Abstract We seek to create a generation of optoelectronic and microelectronic devices whose performance is fundamentally enhanced and driven by the potent participation of phonons in the active electronic processes at a microscopic level. With this in mind we propose to establish a multidisciplinary research program, with both basic and applied device science components, to develop strategically selected classes of devices where such phonon enhancement is expected to make a decisive difference in propelling these devices to technological viability for a range of DoD and civilian applications. The devices range from quantum cascade and intersubband mid-IR lasers to new THz frequency laser sources, from semiconductor lasers in the blue and near ultraviolet to novel ultrahigh speed bipolar tunneling transistors, and impact other devices such as high power microwave FETs, to. To achieve the ambitious goals, we have assembled a team of eight electrical engineers, physicists, and material scientists, drawn from four universities, all of whom have been involved in pioneering device research and made contributions in diverse, yet complementary areas, that directly support the proposed effort. The research in the MURI 2000 program is based on the premise that extensive opportunities exist to transform the detrimental problems generally associated with phonons into a distinct benefit for creative enhancement of the operation for a broad range of optoelectronic and electronic devices. By combining sophisticated experimental and powerful theoretical tools we will explicitly focus on the role of phonon assisted and phonon dominated processes that will shape and control the functionality of the cutting edge devices which form the technology basis of the program. The team concept is designed to approach the challenges within an integrated mode composed of three overlapping spheres of activity. First, advanced materials synthesis capabilities will be employed to create advanced electronic material heterostructures that span the full range of AlGaInAs, GaInAlSb, SiGe, and GaAlInN semiconductors. Second, experimental probes that range from femtosecond time resolved spectroscopies to tunneling microscopies will be employed for the study of electron-phonon and phonon physics in lower dimensional structures, in close interaction with innovative theoretical concepts and methodologies. Third, device design, fabrication, and characterization, for which state-of-the-art capabilities exist within the team will be directly linked to the material and basic science components of the program for maximum synergy. Close, interactive, and collaborative ties to U.S. industry and Government Laboratories are a key feature of the program, ensuring effective technology transfer. Viewed through the prism of the device goals, the program is divided into seven tasks:
Because of the powerful scientific synergy which is built into our program, advanced studies of basic phonon driven phenomena form a key element for the team:
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