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Materials Research Science and Engineering Center on RESEARCH ACCOMPLISHMENTS AND PLANS
IRG1: STRESS IN THIN FILM AND SMALL SCALE STRUCTURES Faculty participants: A.F. Bower, E. Chason, L.B. Freund, P. Guduru, K.S. Kumar, B.W. Sheldon, V. Shenoy, (7 students, 1 post-docs) A major unifying theme of IRG1 is the coupling between stress, surface kinetics and surface energetics to understand dynamical evolution at small length scales. In this respect, Shenoy’s work has focused on understanding and modeling the evolution of nanostructures and surfaces. In a collaboration with Jim Hannon of IBM, they have performed detailed calculations to interpret LEEM measurements of the evolution of the technologically important Si(100) surface during deposition. The 2x1 reconstruction on this surface induces an anisotropic surface stress that rotates 90 deg between different atomic levels. Their calculations explain the complex spiral motion observed around dislocation cores intersecting the surface, due to a surface chemical potential that depends on the step energetics and the surface stress. These calculations make it possible to quantitatively evaluate critical surface kinetic parameters as well as increase our understanding of the effect of stress on controlling surface evolution. Bower et al. have made substantial progress in developing a front-tracking finite element method to predict the evolution of stress during the deposition of a thin polycrystalline film on a substrate. The film simulations consider both elastic interactions in the solid and transport along the film surface. A cohesive zone model (as shown schematically in figure 2) is used to model the attractive interaction between island surfaces as individual clusters coalesce to form grain boundaries. The effects of mass diffusion inside the grain boundary and differences in surface and grain boundary diffusivity are also included in the model. During the past year, changes to the numerical procedure have enabled them to dramatically increase the speed of the computer simulations, making it possible to conduct parametric studies of the effect of material properties and processing conditions on the stress evolution. Representative results are illustrated in figure 3, showing a sequence of stress contours during the coalescence of two islands – note the formation of grain boundary, and the complex stress distribution that develops in the triple junction. A characteristic three-stage process of (i) zero stress prior to coalescence; (ii) tensile stress at the instant of coalescence; and (iii) compressive stress after full coalescence emerges naturally from our simulations, in excellent qualitative and quantitative agreement with experiment. The dependence of the steady state stress on growth flux over a large range has been modeled showing the conditions for which the stress reaches a compressive maximum. The modeling studies have been complemented by experimental work on physical vapor deposition of low mobility materials (Sheldon) and electrodeposition of high mobility materials (Sheldon and Chason) to cover a wide range of kinetic parameters. These experiments are enabling the effect of surface mobility and grain size on residual stress to be quantified for comparison with the model predictions. In addition to the development of residual stress, Sheldon has used changes in film stress to provide information about the energetics and kinetics of point defects in non-stoichiometric oxide materials (e.g., TiO2-x, CeO2-x, etc.). The point defect concentration plays a critical role in controlling film stress as well as atomic and electronic transport in these materials. As shown in figure 3, the stress in the film changes depending on the ambient environment (i.e., oxidizing or reducing atmosphere). The relationship between the steady state stress and the temperature/pressure of the surrounding gas is used to determine the energetics of defect formation and the rate of change of the stress is used to determine the kinetics of defect diffusion. The defect concentration and defect kinetics are difficult to measure directly, and monitoring film stress provides important information that is not readily obtained from other techniques (e.g., impedance spectroscopy). The temperature and pressure dependence of the resulting stress has been used to determine the formation energy for oxygen vacancies in TiO2-x and CeO2-x films. The time-evolution of the stress in TiO2-x films has been used to determine the temperature-dependent point defect diffusivity. They are also performing experiments on stress evolution during constrained sintering of Gd-doped ceria, which is of interest as an electrolyte for solid oxide fuel cells. Chason and Kumar have been studying the formation of Sn whiskers in coatings on Cu conductors. Whisker formation has become a critical problem in electronics manufacturing due to environmental regulations requiring the removal of Pb. Pb-Sn alloys coatings (that have been used in commercial applications up until now) do not form whiskers, but lead-free pure Sn coatings (that are being substituted for Pb-Sn) produce many whiskers that create short circuits and system failures, including several documented satellite crashes. Several major results have been obtained in the past year. The simultaneous evolution of intermetallic (IMC) volume, film stress and whisker nucleation has been measured on layers of different thickness and composition. They find that the stress saturates at a value comparable to the yield stress, even though the IMC continues to grow, which indicates the onset of plastic deformation in the Sn layers to accommodate the volumetric expansion around the growing IMC particles. The presence of dislocation-mediated plasticity was confirmed by cross-sectional TEM measurements (as shown in figure 5) which show that the highly mobile dislocations form into subgrain boundaries. The oxide plays a critical role by preventing dislocations form escaping to the top surface and relieving the stress. In contrast with pure Sn layers, alloy layers of Pb-Sn do not build up large stresses even though the growth of IMC is comparable to the pure Sn. This is attributed to the different microstructure of the Pb-Sn layers, with many horizontal grain boundaries that can absorb the dislocations without creating stress. In the future, these will be extended to different layered structures to identify underlying materials processes and explore mitigation strategies. The experimental results will also be used as a basis for developing models of IMC growth and stress evolution to develop a predictive capability for whisker formation and to interpret accelerated aging studies. IRG2: Multiscale Mechanics of Complex Microstructures Faculty participants: Bower, Curtin, Gao, Kim, Kumar, Needleman (4 students, 1 post-doc) The goal of IRG 2 is to elucidate the mechanisms of deformation and failure in complex multiphase and nanoscale microstructures. The project is motivated by the need to develop advanced materials that are capable of withstanding stress, often combined with an extreme environment, for applications such aircraft structures, gas turbines, and lightweight engines for automotive applications. Our approach is to use multi-scale computer simulations that include cohesive zone models of fracture and fatigue, discrete dislocation models of plasticity, and several atomistic simulations methods to model material processes at continuum, meso- and atomic scales. Our simulations are guided and verified by in-situ observations of failure in both model systems, as well as by experiments designed to provide quantitative measurements of strength associated with specific processes. Our continuum fracture models use cohesive zones to model material failure at the crack tip. We are using mesoscale and atomistic simulations, as well as experiments, to calibrate these constitutive relations and provide insight into the underlying processes that lead to material failure. Needleman is using discrete dislocation simulations to study dislocation emission and organization near crack tips during fracture, Kumar is using in-situ microscopy to provide direct observations of these processes, and Kim is using model experiments to measure the influence of fluctuating stress fields near a crack tip on the effective fracture toughness of the material. Many failure mechanisms in complex microstructures are controlled to a large extent by meso-scale interactions between defects, at length scales between 100nm and 1000nm. Needleman and Curtin are using discrete dislocation simulations to study a range of problems where meso-scale deformation mechanisms play an important role. Three significant studies were completed during the past year
In the development of multi-scale simulation methods, Curtin and Needleman are currently creating a technique to couple the discrete dislocation method with continuum plasticity in a finite element framework. This will provide a direct connection to macroscopic (structural) length-scales, and, if combined with the Coupled Atomistic-Discrete Dislocation method recently developed by Curtin, will permit simulation of an entire component at all length scales. In addition, Needleman is using MD simulations to calibrate parameters such as dislocation nucleation criteria that are used in discrete dislocation models. Work during the past year focused on studies of dislocation nucleation at free surfaces. Important conclusions of this study are (i) stress magnitudes at the instant of dislocation nucleation are nearly an order of magnitude smaller than for homogeneous bulk dislocation nucleation and (ii) contrary to standard assumptions, dislocation nucleation is not well-represented by a critical value of the resolved shear stress but is reasonably well-represented by the critical stress gradient criterion. Finally, Curtin has developed a new multi-scale approach that can predict the influence of solute chemistry and volume fraction in Al/Mg alloys, in association with the GM/Brown CRL. Understanding the influence of solutes on plastic flow in solute strengthened metals is a critical issue in designing lightweight Al and Mg alloys with improved formability. The new theory identifies Mg motion across the dislocation core, from the compression side to the tension side, as the operative mechanism (Fig 3). The activation enthalpy for this cross-core Mg diffusion is much lower than that for bulk Mg diffusion in Al, greatly accelerating the process in comparison to existing theories and in good agreement with experimental values (strain rate scale of 5x10-5/sec predicted and measured). The energy change upon the cross-core diffusion sets a strength scale that is comparable to experimental values (see Fig 3). The cross-core mechanism is expected to operate in other material systems as well. SEED: MICROMECHANICS OF CELL ADHESION Faculty participants: L.B. Freund, J. Morgan, J. Tang (4 students, 1 post-doc)
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