Material Characterization and Modeling
- Characterizing nanomaterials with UV/Vis Absorption, FTIR, Photoluminescence, Fluorescence, NMR, and Micro-Raman spectroscopy
- Temperature control with multiple Cryostats
- Scanning probe microscopy: SEM, STM, TEM, NSOM, AFM (for force measurements and topography)
- ELISA
- Computational physics and Density Functional Theory in nanoscale biophysics
- Theoretical modeling of DNA and molecular physics
- Pertubative and complex phenomena in biological and similar nanoscale systems
- Electro-mechanical properties of nanopost/nanotube arrays
- Scanning Probe Microscopy for characterization of Self Assembled Monolayers, Lipid Bilayers, and Bacterial S-Layers
![]() |
TEM imaging of CNT’s wall structure (annealed at 700°C) Jouzi, M. |
![]() |
Highly-ordered nanopore array templates on various substrates, with controllable pore diameter, length, density, and periodicity. Yin, A. |
![]() |
Exposed template nanotubes Tzolov, M. |
![]() |
XRD graph showing ZnO nanorod growth in only the c -axis orientation. |
H. Chik, J. Liang, S. G. Cloutier, N. Kouklin, and J. M. Xu, "Periodic array of uniform ZnO nanorods by second-order self-assembly" Appl. Phys. Lett. 84, 3376-3378, (2004)
![]() |
SAD pattern of ZnO nanorod |
Chik, H (2004). Zinc Oxide Nanorods. PhD Thesis, Brown University, RI.
![]() |
Fast Fourier transform (FFT) images comparing quantum dots (QDs) fabricated by different methods. |
![]() |
(a) Powder x-ray diffraction pattern of the InAs quantum dots (QDs) on GaAs. (b) TEM image of a single InAs QD grown inside a predefined nanopore in GaAs. |
J. Liang, H. Luo, R. Beresford, and J.M. Xu, "A growth pathway for highly ordered quantum dot arrays", Appl. Phys. Lett., 85, 5974-5976, 2004.
![]() |
Typical IR-absorbance spectrum obtained on 60-nm-diameter CNTs. |
![]() |
A base line corrected CNT-IR absorbance spectrum. |
N. Kouklin, M. Tzolov, D. Straus, A. Yin, and J. M. Xu, "Infrared absorption properties of carbon nanotubes synthesize by chemical vapor deposition", Appl. Phys. Lett., 85(19), 4463-4465, 2004.
![]() |
VASP simulation for (N, N)- and (N, 0)-type carbon nanotubes. |
![]() |
The measured shift of the G-band peak with applied voltage (charge) of both polarities. |
![]() |
(a) Schematic view of the experiment setup. (b) A view of carbon nanotube mesh on the wafer. (c) Raman spectrum of carbon nanotubes and Gaussian fits of Raman peaks (dashed lines). (d) High resolution TEM image of our multiwall carbon nanotubes. |