Year of Publication: 2023
GaN hot electron transistors: From ballistic to coherent
, “GaN hot electron transistors: From ballistic to coherent”, Solid-State Electronics, vol. 208, p. 108741, 2023.
Year of Publication: 2022
High-resolution DNA binding kinetics measurements with double gate FD-SOI transistors
, “High-resolution DNA binding kinetics measurements with double gate FD-SOI transistors”, in 2022 International Electron Devices Meeting (IEDM), 2022.
III-nitride vertical hot electron transistor with polarization doping and collimated injection
, “III-nitride vertical hot electron transistor with polarization doping and collimated injection”, Applied Physics Letters, vol. 121, p. 223503, 2022.
Cryogenic probe for low-noise, high-frequency electronic measurements
, “Cryogenic probe for low-noise, high-frequency electronic measurements”, Rev. Sci. Instrum., vol. 93, no. 10, p. 103902, 2022.
High-performance dual-gate graphene pH sensors
, “High-performance dual-gate graphene pH sensors”, Applied Physics Letters, vol. 120, p. 263701, 2022.
Year of Publication: 2021
A Review of Sharp-Switching Band-Modulation Devices
, “A Review of Sharp-Switching Band-Modulation Devices”, Micromachines, vol. 12, p. 01540, 2021.
Fast and efficient germanium quantum dot photodetector with an ultrathin active layer
, “Fast and efficient germanium quantum dot photodetector with an ultrathin active layer”, Applied Physics Letters, vol. 119, p. 221108, 2021.
Optimization of photoelectron In-situ sensing device in FD-SOI
, “Optimization of photoelectron In-situ sensing device in FD-SOI”, IEEE Journal of the Electron Devices Society, vol. 9, pp. 187-194, 2021.
Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications
, “Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications”, Applied Physics Letters, vol. 119, p. 043501, 2021.
Year of Publication: 2020
Unijunction transistor on SOI substrate
, “Unijunction transistor on SOI substrate”, in 2020 IEEE Intern. Conf. Solid-State Integrated Circuits Technology (ICSICT), Kunming, China, 2020.
High-performance germanium quantum dot photodetectors: Response to continuous wave and pulsed excitation
, “High-performance germanium quantum dot photodetectors: Response to continuous wave and pulsed excitation”, Applied Physics Letters, vol. 101, no. 25, p. 251105, 2020.
Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM
, “Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM”, IEEE Transactions on Device and Materials Reliability, vol. 20, no. 3, pp. 488 - 497, 2020.
Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range
, “Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range”, IEEE Transactions on Electron Devices, vol. 67, no. 8, pp. 3256 - 3262, 2020.
On the Coupling of Electron Transfer to Proton Transfer at Electrified InterfacesOn the Coupling of Electron Transfer to Proton Transfer at Electrified Interfaces
, “On the Coupling of Electron Transfer to Proton Transfer at Electrified InterfacesOn the Coupling of Electron Transfer to Proton Transfer at Electrified Interfaces”, Journal of the American Chemical Society, vol. 142, no. 27, pp. 11829 - 11834, 2020.
Photodiode with low dark current built in silicon-on-insulator using electrostatic doping
, “Photodiode with low dark current built in silicon-on-insulator using electrostatic doping”, Solid-State Electronics, vol. 168, p. 107733, 2020.
Year of Publication: 2019
Direct characterization of carrier diffusion in halide-perovskite thin films using transient photoluminescence imaging
, “Direct characterization of carrier diffusion in halide-perovskite thin films using transient photoluminescence imaging”, ACS Photonics, vol. 6, no. 10, pp. 2375 - 2380, 2019.
Dynamic coupling effect in Z2-FET and Its application for photodetection
, “Dynamic coupling effect in Z2-FET and Its application for photodetection”, IEEE Journal of the Electron Devices Society, vol. 7, pp. 846 - 854, 2019.
A highly sensitive photodetector based on deep-depletion effects in SOI transistors
, “A highly sensitive photodetector based on deep-depletion effects in SOI transistors”, in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame, CA, USA, 2019.
A new photodetector on SOI
, “A new photodetector on SOI”, in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame, CA, USA, 2019.
High-performance germanium quantum dot photodetectors in the visible and near infrared
, “High-performance germanium quantum dot photodetectors in the visible and near infrared”, Materials Science in Semiconductor Processing, vol. 92, pp. 19 - 27, 2019.
Year of Publication: 2018
Broadband visible-to-telecom wavelength germanium quantum dot photodetectors
, “Broadband visible-to-telecom wavelength germanium quantum dot photodetectors”, Applied Physics Letters, vol. 113, no. 18, p. 181101, 2018.
Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI)
, “Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI)”, IEEE Journal of the Electron Devices Society, vol. 6, pp. 557 - 564, 2018.
Low-temperature operation of high-efficiency Ge quantum dot photodetectors in the visible and near-IR
, “Low-temperature operation of high-efficiency Ge quantum dot photodetectors in the visible and near-IR”, physica status solidi (a), vol. 215, no. 3, p. 1700453, 2018.
A sub-threshold noise transient simulator based on integrated random telegraph and thermal noise modeling
, “A sub-threshold noise transient simulator based on integrated random telegraph and thermal noise modeling”, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 37, pp. 643 - 656, 2018.
Year of Publication: 2017
Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors
, “Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors”, Solid-State Electronics, vol. 135, pp. 94 - 99, 2017.
Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors
, “Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors”, Solid-State Electronics, vol. 136, pp. 43 - 49, 2017.
Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing
, “Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing”, Microelectronic Engineering, vol. 178, pp. 164 - 167, 2017.
Year of Publication: 2016
Design of error-resilient logic gates with reinforcement using implications
, “Design of error-resilient logic gates with reinforcement using implications”, in Proceedings of the 26th edition on Great Lakes Symposium on VLSI - GLSVLSI '16, Boston, Massachusetts, USA, 2016.
Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films
, “Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films”, Journal of Applied Physics, vol. 119, no. 1, p. 014304, 2016.
A review of sharp-switching devices for utra-low power applications
, “A review of sharp-switching devices for utra-low power applications”, IEEE Journal of the Electron Devices Society, vol. 4, no. 5, pp. 215 - 226, 2016.
A fast simulator for the analysis of sub-threshold thermal noise transients
, “A fast simulator for the analysis of sub-threshold thermal noise transients”, in Proceedings of the 53rd Annual Design Automation Conference (DAC 2016), Austin, TexasNew York, New York, USA, 2016.
Noise performance of high-efficiency germanium quantum dot photodetectors
, “Noise performance of high-efficiency germanium quantum dot photodetectors”, Applied Physics Letters, vol. 109, no. 5, p. 053508, 2016.
High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO2 gate insulator
, “High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO2 gate insulator”, Thin Solid Films, vol. 614, pp. 52 - 55, 2016.
Year of Publication: 2015
CMOS-compatible FDSOI bipolar-enhanced tunneling FET
, “CMOS-compatible FDSOI bipolar-enhanced tunneling FET”, in 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Rohnert Park, CA, USA, 2015.
Special memory mechanisms in SOI devices
, “Special memory mechanisms in SOI devices”, ECS Transactions, vol. 66, no. 5, pp. 201 - 210, 2015.
Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications
, “Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications”, Journal of Applied Physics, vol. 117, no. 12, p. 125104, 2015.
Comment on “Investigation of tunnel field-effect transistors as a capacitor-less memory cell” [Appl. Phys. Lett. 104, 092108 (2014)]
, “Comment on “Investigation of tunnel field-effect transistors as a capacitor-less memory cell” [Appl. Phys. Lett. 104, 092108 (2014)]”, Applied Physics Letters, vol. 106, no. 1, p. 016101, 2015.
Year of Publication: 2014
Top-gated indium–zinc–oxide thin-film transistors with in-situ Al2O3/HfO2 gate oxide
, “Top-gated indium–zinc–oxide thin-film transistors with in-situ Al2O3/HfO2 gate oxide”, IEEE Electron Device Letters, vol. 35, no. 12, pp. 1251 - 1253, 2014.
Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices
, “Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices”, in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Millbrae, CA, USA, 2014.
Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors
, “Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors”, Applied Physics Letters, vol. 105, no. 9, p. 093504, 2014.
Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor
, “Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor”, Applied Physics Letters, vol. 105, no. 6, p. 062106, 2014.
Electron-hole bilayer TFET: Experiments and comments
, “Electron-hole bilayer TFET: Experiments and comments”, IEEE Transactions on Electron Devices, vol. 61, no. 8, pp. 2674 - 2681, 2014.
Z2-FET: A promising FDSOI device for ESD protection
, “Z2-FET: A promising FDSOI device for ESD protection”, Solid-State Electronics, vol. 97, pp. 23 - 29, 2014.
- Read more about Z2-FET: A promising FDSOI device for ESD protection
- Log in to post comments
- DOI
Year of Publication: 2013
Sharp-switching SOI devices
, “Sharp-switching SOI devices”, ECS Transactions, vol. 53, no. 5, pp. 3 - 13, 2013.
Sharp-switching hgh-current tunneling devices
, “Sharp-switching hgh-current tunneling devices”, ECS Transactions, vol. 53, no. 5, pp. 63 - 74, 2013.
(Invited) Innovative Sharp Switching Devices
, “(Invited) Innovative Sharp Switching Devices”, ECS Transactions, vol. 54, no. 1, pp. 65 - 75, 2013.
A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications
, “A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications”, Solid-State Electronics, vol. 90, pp. 2 - 11, 2013.
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology
, “Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology”, Thin Solid Films, vol. 548, pp. 551 - 555, 2013.
Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage
, “Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage”, Solid-State Electronics, vol. 84, pp. 147 - 154, 2013.
Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current
, “Novel Bipolar-Enhanced Tunneling FET With Simulated High On-Current”, IEEE Electron Device Letters, vol. 34, no. 1, pp. 24 - 26, 2013.
Year of Publication: 2012
Fast, high-efficiency Germanium quantum dot photodetectors
, “Fast, high-efficiency Germanium quantum dot photodetectors”, in 2012 Lester Eastman Conference on High Performance Devices (LEC), Providence, RI, USA, 2012.
Innovative capacitorless SOI DRAMs
, “Innovative capacitorless SOI DRAMs”, in 2012 IEEE International SOI Conference2012 IEEE International SOI Conference (SOI), Napa, CA, USA, 2012.
Z2-FET: A zero-slope switching device with gate-controlled hysteresis
, “Z2-FET: A zero-slope switching device with gate-controlled hysteresis”, in Proceedings of Technical Program of 2012 VLSI Technology, System and Application (VLSI-TSA), Hsinchu, 2012.
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
, “A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection”, Solid-State Electronics, vol. 76, pp. 109 - 111, 2012.
Shot-Noise-Induced Failure in Nanoscale Flip-Flops Part II: Failure Rates in 10-nm Ultimate CMOS
, “Shot-Noise-Induced Failure in Nanoscale Flip-Flops Part II: Failure Rates in 10-nm Ultimate CMOS”, IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 807 - 812, 2012.
Shot-Noise-Induced Failure in Nanoscale Flip-Flops—Part I: Numerical Framework
, “Shot-Noise-Induced Failure in Nanoscale Flip-Flops—Part I: Numerical Framework”, IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 800 - 806, 2012.
A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration
, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters, vol. 33, no. 2, pp. 179 - 181, 2012.
Axial SiGe Heteronanowire Tunneling Field-Effect Transistors
, “Axial SiGe Heteronanowire Tunneling Field-Effect Transistors”, Nano Letters, vol. 12, no. 11, pp. 5850 - 5855, 2012.
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
, “Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors”, Journal of Applied Physics, vol. 112, no. 8, p. 083103, 2012.
Year of Publication: 2011
Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET
, “Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET”, Microelectronic Engineering, vol. 88, no. 7, pp. 1301 - 1304, 2011.
Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling
, “Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling”, Solid-State Electronics, vol. 65-66, pp. 226 - 233, 2011.
Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS Devices
, “Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS Devices”, IEEE Transactions on Device and Materials Reliability, vol. 11, no. 1, pp. 50 - 59, 2011.
A tunneling field effect transistor model combining interband tunneling with channel transport
, “A tunneling field effect transistor model combining interband tunneling with channel transport”, Journal of Applied Physics, vol. 110, no. 10, p. 104503, 2011.
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
, “High-efficiency silicon-compatible photodetectors based on Ge quantum dots”, Applied Physics Letters, vol. 98, no. 22, p. 221107, 2011.
Year of Publication: 2010
Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices
, “Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices”, IEEE Transactions on Nuclear Science, 2010.
Low-frequency noise behavior of tunneling field effect transistors
, “Low-frequency noise behavior of tunneling field effect transistors”, Applied Physics Letters, vol. 97, no. 24, p. 243503, 2010.
Growth, electrical rectification, and gate control in axial in-situ doped p-n junction germanium nanowires
, “Growth, electrical rectification, and gate control in axial in-situ doped p-n junction germanium nanowires”, Applied Physics Letters, vol. 96, no. 26, p. 262102, 2010.
Year of Publication: 2009
Markov Chain Analysis of Thermally Induced Soft Errors in Subthreshold Nanoscale CMOS Circuits
, “Markov Chain Analysis of Thermally Induced Soft Errors in Subthreshold Nanoscale CMOS Circuits”, IEEE Transactions on Device and Materials Reliability, vol. 9, no. 3, pp. 494 - 504, 2009.
Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2/Si films
, “Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2/Si films”, Applied Physics Letters, vol. 95, no. 6, p. 064103, 2009.
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
, “Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator”, Applied Physics Letters, vol. 94, no. 26, p. 263508, 2009.
Year of Publication: 2008
Electron tunneling spectroscopy of a quantum antidot in the integer quantum Hall regime
, “Electron tunneling spectroscopy of a quantum antidot in the integer quantum Hall regime”, Physical Review B, vol. 77, no. 11, 2008.
Year of Publication: 2007
Designing nanoscale logic circuits based on Markov random felds
, “Designing nanoscale logic circuits based on Markov random felds”, Journal of Electronic Testing, vol. 2336935087391964746, no. 2-334422–3, pp. 255 - 266, 2007.
Hopping conduction in disordered carbon nanotubes
, “Hopping conduction in disordered carbon nanotubes”, Solid State Communications, vol. 142, no. 5, pp. 287 - 291, 2007.
Thermally-induced soft errors in nanoscale CMOS circuits
, “Thermally-induced soft errors in nanoscale CMOS circuits”, in 2007 IEEE International Symp. on Nanoscale Architectures, San Jose, CA, USA, 2007.
Nonclassical devices in SOI: Genuine or copyright from III–V
, “Nonclassical devices in SOI: Genuine or copyright from III–V”, Solid-State Electronics, vol. 51, no. 2, pp. 212 - 218, 2007.
Negative transconductance in double-gate germanium-on-insulator field effect transistors
, “Negative transconductance in double-gate germanium-on-insulator field effect transistors”, Applied Physics Letters, vol. 91, no. 18, p. 183511, 2007.
Year of Publication: 2006
Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs
, “Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs”, in 2006 International SiGe Technology and Device Meeting (ISTDM), Princeton, NJ, USA, 2006.
Designing MRF based Error Correcting Circuits for Memory Elements
, “Designing MRF based Error Correcting Circuits for Memory Elements”, in 2006 Proceedings of the Design Automation & Test in Europe Conference (DATE), Munich, Germany, 2006.
Quantum confinement induced by strain relaxation in an elliptical double-barrier
, “Quantum confinement induced by strain relaxation in an elliptical double-barrier”, Physical Review B, vol. 73, no. 11, 2006.
MRF Reinforcer: A Probabilistic Element for Space Redundancy in Nanoscale Circuits
, “MRF Reinforcer: A Probabilistic Element for Space Redundancy in Nanoscale Circuits”, IEEE Micro, vol. 26, no. 5, pp. 19 - 27, 2006.
Year of Publication: 2005
Designing logic circuits for probabilistic computation in the presence of noise
, “Designing logic circuits for probabilistic computation in the presence of noise”, in Proceedings of the 42nd annual conference on Design automation - DAC '05, San Diego, California, USA, 2005.
Fractional statistics of Laughlin quasiparticles in quantum antidots
, “Fractional statistics of Laughlin quasiparticles in quantum antidots”, Physical Review B, vol. 71, no. 15, 2005.
Correct Biasing Rules for Virtual DG Mode Operation in SOI-MOSFETs
, “Correct Biasing Rules for Virtual DG Mode Operation in SOI-MOSFETs”, IEEE Transactions on Electron Devices, vol. 52, no. 1, pp. 124 - 125, 2005.
Electrical resistance of island-containing thin metal interconnects on polymer substrates under high strain
, “Electrical resistance of island-containing thin metal interconnects on polymer substrates under high strain”, Journal of Applied Physics, vol. 98, no. 8, p. 086107, 2005.
Carbon nanotube gated lateral resonant tunneling field-effect transistors
, “Carbon nanotube gated lateral resonant tunneling field-effect transistors”, Applied Physics Letters, vol. 87, no. 15, p. 152102, 2005.
Differential current amplification in three-terminal Y-junction carbon nanotube devices
, “Differential current amplification in three-terminal Y-junction carbon nanotube devices”, Applied Physics Letters, vol. 87, no. 12, p. 123504, 2005.
Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors
, “Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors”, Applied Physics Letters, vol. 86, no. 22, p. 223504, 2005.
Year of Publication: 2004
Blue sky in SOI: new opportunities for quantum and hot-electron devices
, “Blue sky in SOI: new opportunities for quantum and hot-electron devices”, Solid-State Electronics, vol. 48, no. 6, pp. 877 - 885, 2004.
Lateral interband tunneling transistor in silicon-on-insulator
, “Lateral interband tunneling transistor in silicon-on-insulator”, Applied Physics Letters, vol. 84, no. 10, pp. 1780 - 1782, 2004.
Year of Publication: 2003
Ultrathin silicon-on-insulator vertical tunneling transistor
, “Ultrathin silicon-on-insulator vertical tunneling transistor”, Applied Physics Letters, vol. 83, no. 8, pp. 1653 - 1655, 2003.
Year of Publication: 2002
Strain-induced quantum ring hole states in a gated vertical quantum dot
, “Strain-induced quantum ring hole states in a gated vertical quantum dot”, Physical Review Letters, vol. 89, no. 9, 2002.
Single-hole tunneling into a strain-induced SiGe quantum ring
, “Single-hole tunneling into a strain-induced SiGe quantum ring”, Physical Review B, vol. 66, no. 16, 2002.
Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures
, “Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures”, Applied Physics Letters, vol. 80, no. 13, pp. 2242 - 2244, 2002.
Year of Publication: 2001
Double-gate SOI MOSFETs with asymmetrical configuration
, “Double-gate SOI MOSFETs with asymmetrical configuration”, in Proceedings 2001 IEEE International SOI Conference., Durango, CO, USA, 2001.
Double-Gate MOSFETs: Is Gate Alignment Mandatory?
, “Double-Gate MOSFETs: Is Gate Alignment Mandatory?”, in 31st European Solid-State Device Research Conference (ESSDERC), Nuremberg, Germany, 2001.
Double-gate MOSFETs: performance and technology options
, “Double-gate MOSFETs: performance and technology options”, in 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (ISDRS), Washington, DC, USA, 2001.
Absence of compressible edge channel rings in quantum antidots
, “Absence of compressible edge channel rings in quantum antidots”, Physical Review Letters, vol. 87, no. 14, 2001.
Invariance of charge of Laughlin quasiparticles
, “Invariance of charge of Laughlin quasiparticles”, Physical Review B, vol. 64, no. 8, 2001.
Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion
, “Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion”, Applied Physics Letters, vol. 79, no. 1, pp. 129 - 131, 2001.
Year of Publication: 2000
Magnetotunneling spectroscopic probe of quantization due to inhomogeneous strain in a Si/SiGe vertical quantum dot
, “Magnetotunneling spectroscopic probe of quantization due to inhomogeneous strain in a Si/SiGe vertical quantum dot”, Physical Review B, vol. 62, no. 12, pp. R7731 - R7734, 2000.
Year of Publication: 1999
Current oscillations in semiconductor-insulator multiple quantum wells
, “Current oscillations in semiconductor-insulator multiple quantum wells”, Physical Review B, vol. 60, no. 23, pp. 15975 - 15979, 1999.
Inhomogeneous strain relaxation in triple-barrier p-Si/SiGe nanostructures
, “Inhomogeneous strain relaxation in triple-barrier p-Si/SiGe nanostructures”, Physical Review B, vol. 60, no. 24, pp. 16597 - 16602, 1999.
Year of Publication: 1998
Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires
, “Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires”, Journal of Applied Physics, vol. 84, no. 7, pp. 3714 - 3725, 1998.
Inhomogeneous strain in individual quantum dots probed by transport measurements
, “Inhomogeneous strain in individual quantum dots probed by transport measurements”, Applied Physics Letters, vol. 72, no. 14, pp. 1739 - 1741, 1998.
Year of Publication: 1997
Multi-emitter Si/GexSi1-x heterojunction bipolar transistor with no base contact and enhanced logic functionality
, “Multi-emitter Si/GexSi1-x heterojunction bipolar transistor with no base contact and enhanced logic functionality”, IEEE Electron Device Letters, vol. 18, no. 9, pp. 453 - 455, 1997.
Year of Publication: 1996
Uniaxial stress effects on a Si/Si1−xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy
, “Uniaxial stress effects on a Si/Si1−xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy”, Applied Surface Science, vol. 102, pp. 242 - 246, 1996.
Resonant-tunneling spectroscopy of coupled hole subbands in strained Si/SiGe triple-barrier structures
, “Resonant-tunneling spectroscopy of coupled hole subbands in strained Si/SiGe triple-barrier structures”, Physical Review B, vol. 53, no. 3, pp. 994 - 997, 1996.
Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity
, “Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity”, Applied Physics Letters, vol. 68, no. 23, pp. 3233 - 3235, 1996.
Year of Publication: 1995
SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition
, “SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition”, Vacuum, vol. 46, no. 8-10, pp. 947 - 950, 1995.
Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy
, “Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy”, Applied Physics Letters, vol. 67, no. 26, pp. 3921 - 3923, 1995.
High field transport in an edge overgrown lateral superlattice
, “High field transport in an edge overgrown lateral superlattice”, Applied Physics Letters, vol. 66, no. 3, pp. 323 - 325, 1995.
Year of Publication: 1994
Valence band Landau level mixing and anisotropy in Si1−xGex investigated by resonant magnetotunneling
, “Valence band Landau level mixing and anisotropy in Si1−xGex investigated by resonant magnetotunneling”, Surface Science, vol. 305, no. 1-3, pp. 307 - 311, 1994.
Fabrication of three‐terminal resonant tunneling devices in silicon‐based material
, “Fabrication of three‐terminal resonant tunneling devices in silicon‐based material”, Applied Physics Letters, vol. 64, no. 13, pp. 1699 - 1701, 1994.
Year of Publication: 1993
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
, “Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition”, Journal of Electronic Materials, vol. 2233A 259664154594318360617615B85512, no. 3, pp. 303 - 308, 1993.
Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition
, “Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 11, no. 3, p. 1083, 1993.
Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition
, “Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 11, no. 3, p. 1124, 1993.
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
, “In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells”, Physical Review B, vol. 48, no. 20, pp. 15112 - 15115, 1993.
Effect of nonequilibrium deep donors in heterostructure modeling
, “Effect of nonequilibrium deep donors in heterostructure modeling”, Physical Review B, vol. 48, no. 7, pp. 4899 - 4902, 1993.
Observation of valence-band Landau-level mixing by resonant magnetotunneling
, “Observation of valence-band Landau-level mixing by resonant magnetotunneling”, Physical Review B, vol. 47, no. 23, pp. 16036 - 16039, 1993.
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
, “Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics”, Applied Physics Letters, vol. 63, no. 21, pp. 2929 - 2931, 1993.
Year of Publication: 1992
Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition
, “Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition”, Applied Physics Letters, vol. 61, no. 24, pp. 2872 - 2874, 1992.
Erratum: ‘‘Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling’’ [Appl. Phys. Lett. 60, 601 (1992)]
, “Erratum: ‘‘Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling’’ [Appl. Phys. Lett. 60, 601 (1992)]”, Applied Physics Letters, vol. 60, no. 22, pp. 2812 - 2812, 1992.
Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling
, “Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling”, Applied Physics Letters, vol. 60, no. 5, pp. 601 - 603, 1992.
Year of Publication: 1991
Resonant tunneling of two‐dimensional electrons into one‐dimensional subbands of a quantum wire
, “Resonant tunneling of two‐dimensional electrons into one‐dimensional subbands of a quantum wire”, Applied Physics Letters, vol. 58, no. 13, pp. 1440 - 1442, 1991.
Year of Publication: 1990
Transport in transverse magnetic fields in resonant tunneling structures
, “Transport in transverse magnetic fields in resonant tunneling structures”, Physical Review B, vol. 42, no. 2, pp. 1374 - 1380, 1990.
Liquid phase epitaxy regrowth of two‐dimensional electron gas on GaAs patterned by in-situ meltback
, “Liquid phase epitaxy regrowth of two‐dimensional electron gas on GaAs patterned by in-situ meltback”, Applied Physics Letters, vol. 57, no. 23, pp. 2455 - 2457, 1990.
Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz
, “Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz”, Physical Review B, vol. 41, no. 12, pp. 8388 - 8391, 1990.
Year of Publication: 1989
Magnetotunneling in double-barrier heterostructures
, “Magnetotunneling in double-barrier heterostructures”, Physical Review B, vol. 40, no. 14, pp. 9829 - 9833, 1989.
Year of Publication: 1988
Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
, “Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures”, Applied Physics Letters, vol. 53, no. 15, pp. 1408 - 1410, 1988.